Wide-Bandgap Power Switch Reliability for Energy Grid Applications
Abstract not provided.
Publications
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Jump to search filtersInfluence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs
Abstract not provided.
Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs
IEEE Transactions on Electron Devices
Abstract not provided.
Characterization and Reliability of SiC- and GaN-Based Power Transistors for Renewable Energy Applications
Abstract not provided.
Impact of the Al Mole Fraction in the Bulk- and Surface-State Induced Instability of AlGaN/GaN HEMTs
Abstract not provided.
ANALYSIS AND PREDICTION OF STABILITY IN COMMERCIAL 1200V 33A 4H-SiC MOSFETS
Abstract not provided.
Impact of the Al Mole Fraction in the Bulk- and Surface-State Induced Instability of AlGaN/GaN HEMTs
Abstract not provided.
DOE Energy Storage Power Electronics Program
Abstract not provided.
Sub-bandgap light-induced carrier generation at room temperature in silicon carbide MOS capacitors
Materials Science Forum
Carrier generation characteristics in n-type substrate SiC MOS capacitors induced by sub-bandgap energy light are reported. The generation rate is high enough to create an inversion layer in ∼20 minutes with monochromatic light (front side illumination) of energy 2.1 eV (intensity ∼5×10 16 cm-2s-1) in 4H-SiC for electric fields smaller than 1 MV/cm. Generation and recovery results strongly indicate involvement of a metastable defect whose efficiency as a generation center increases under hole-rich and decreases under electron-rich conditions. The generation dependence on bias history and light energy shows the defect to have properties consistent with the metastable silicon vacancy / carbon vacancy-antisite complex (VSi/Vc-CSi). © (2012) Trans Tech Publications.
Sub-bandgap light-induced carrier generation at room temperature in silicon carbide MOS capacitors
Materials Science Forum
Carrier generation characteristics in n-type substrate SiC MOS capacitors induced by sub-bandgap energy light are reported. The generation rate is high enough to create an inversion layer in ∼20 minutes with monochromatic light (front side illumination) of energy 2.1 eV (intensity ∼5×10 16 cm-2s-1) in 4H-SiC for electric fields smaller than 1 MV/cm. Generation and recovery results strongly indicate involvement of a metastable defect whose efficiency as a generation center increases under hole-rich and decreases under electron-rich conditions. The generation dependence on bias history and light energy shows the defect to have properties consistent with the metastable silicon vacancy / carbon vacancy-antisite complex (VSi/Vc-CSi). © (2012) Trans Tech Publications.
Analysis and Prediction of Stability in Commercial 1200 V 33A 4H-SiC MOSFETs
Abstract not provided.
Empirical battery model characterizing a utility-scale carbon-enhanced VRLA battery
IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings
In this paper, the electrical characteristics of a carbon enhanced valve-regulated lead-acid (VRLA) battery from East Penn Manufacturing are investigated and a dynamic model is developed for use in electrical simulations. The electrochemical processes that cause specific dynamic behaviors have been investigated. These processes are explained and a non-linear electric model, which captures the results of some of these electrochemical dynamics, is presented. The method to determine model parameters using experimental data is shown. To verify the battery model, both a pulsed current profile and an arbitrary current profile were applied to the battery and to the battery model and the voltage responses of the two were compared. © 2011 IEEE.
Grid-tied Power Electronics
Abstract not provided.
Energy Storage System/Power Electronics Overview
Abstract not provided.
Native American Heritage Observance Event - Stan Atcitty
Abstract not provided.
Degradation Mechanisms and Characterization Techniques in SiC MOSFETs at High Temperature Operation
Abstract not provided.
Sub-bandgap light-induced carrier generation at room temperature in 4H-SiC metal oxide semiconductor capacitors
Applied Physics Letters
Carrier generation characteristics in n-type substrate silicon carbide (SiC) metal oxide semiconductor capacitors induced by sub-bandgap energy light are reported. The generation rate is high enough to create an inversion layer in approximately 20 min with monochromatic front side illumination of energy 2.1 eV in 4H-SiC for electric fields less than 1 MV/cm. Generation and recovery results strongly indicate involvement of a metastable defect whose efficiency as a generation center increases under hole-rich and decreases under electron-rich conditions. The generation dependence on bias history and light energy shows the defect to have properties consistent with the metastable silicon vacancy/carbon vacancy-antisite complex (VSi/Vc-C Si). © 2011 American Institute of Physics.
Analysis and Prediction of Stability in Commercial 1200 V 33A 4H-SiC MOSFETs
Abstract not provided.
Degradation Mechanisms and Characterization Techniques in SiC MOSFETs at High Temperature Operation
Abstract not provided.
Engineered gate oxides for wide bandgap semiconductor MOSFETs
Abstract not provided.
High Power Semiconductor Devices for FACTS: Current State of the Art and Opportunities for Advanced Materials
Abstract not provided.
Commercialization of SiC Power Modules for High Performance Energy Applications
Abstract not provided.
Laboratory Demonstration of Microgrid Power Electronics and Energy Storage
Abstract not provided.
Sub-Bandgap Light-Induced Carrier Generation at Room Temperature in Silicon Carbide MOS Capacitors
Abstract not provided.
Empirical Battery Model Characterizing a Utility-scale Carbon-enhanced VRLA Battery
Abstract not provided.
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