Electroluminescence from self-assembled InAs quantum dots in cascade-like unipolar heterostructures is demonstrated. Initial results show weak luminescence signals in the mid-infrared from such structures, though more recent designs exhibit significantly stronger luminescence with improved designs of the active region of these devices. Further studies of mid-infrared emitting quantum dot structures have shown anisotropically polarized emission at multiple wavelengths. A qualitative explanation of such luminescence is developed and used to understand the growth morphology of buried quantum dots grown on AlAs layers. Finally, a novel design for future mid-infrared quantum dot emitters, intended to increase excited state scattering times and, at the same time, more efficiently extract carriers from the lowest states of our quantum dots, is presented,.
LDRD Project 102662 provided support to pursue experiments aimed at measuring the basic electrodynamic response and possible applications of carbon nanotubes and silicon nanowires at radiofrequency to microwave frequencies, approximately 0.01 to 50 GHz. Under this project, a method was developed to integrate these nanomaterials onto high-frequency compatible co-planar waveguides. The complex reflection and transmission coefficients of the nanomaterials was studied as a function of frequency. From these data, the high-frequency loss characteristics of the nanomaterials were deduced. These data are useful to predict frequency dependence and power dissipation characteristics in new rf/microwave devices incorporating new nanomaterials.
Solid-state lighting (SSL) technologies, based on semiconductor light emitting devices, have the potential to reduce worldwide electricity consumption by more than 10%, which could significantly reduce U.S. dependence on imported energy and improve energy security. The III-nitride (AlGaInN) materials system forms the foundation for white SSL and could cover a wide spectral range from the deep UV to the infrared. For this LDRD program, we have investigated the synthesis of single-crystalline III-nitride nanowires and heterostructure nanowires, which may possess unique optoelectronic properties. These novel structures could ultimately lead to the development of novel and highly efficient SSL nanodevice applications. GaN and III-nitride core-shell heterostructure nanowires were successfully synthesized by metal organic chemical vapor deposition (MOCVD) on two-inch wafer substrates. The effect of process conditions on nanowire growth was investigated, and characterization of the structural, optical, and electrical properties of the nanowires was also performed.
A split-grating-gate detector design has been implemented in an effort to combine the tunabiliry of the basic gratinggate detector with the high responsivity observed in these detectors when approaching the pinchoff regime. The redesign of the gates by itself offers several orders of magnitude improvement in resonant responsivity. Further improvements are gained by placing the detector element on a thermally isolating membrane in order to increase the effects of lattice heating on the device response.
A grating-gated field-effect transistor fabricated from a single-quantum well in a high-mobility GaAs-AlGaAs heterostructure is shown to function as a continuously electrically tunable photodetector of terahertz radiation via excitation of resonant plasmon modes in the well. Different harmonics of the plasmon wave vector are mapped, showing different branches of the dispersion relation. As a function of temperature, the resonant response magnitude peaks at around 30 K. Both photovoltaic and photoconductive responses have been observed under different incident power and bias conditions.
