Publications Details

Tunable Thermal Transport across Interfaces via Phonon Engineering

Ziade, Elbara Z.; Laros, James H.; Hattar, Khalid M.

The influence of He ion radiation on GaAs thermal conductivity was investigated using TDTR and the PGM. We found that damage in the shallow defect only regions of the radiation profile scattering phonons with a frequency to the fourth dependence due to randomly distributed Frankel pairs. Damage near the end of range however, scatters phonons with a second order frequency dependence due to the cascading defects caused by the rapid radiation energy loss at the end of range resulting in defect clusters. Using the PGM and experimental thermal conductivity trends it was then possible to estimate the defect recombination rate and size of defect clusters. The methodology developed here results in a powerful tool for interrogating radiation damage in semiconductors.