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Tilt Magnetic Field Studies of Quantum Hall Effect in a High Quality Si/SiGe Quantum Well

Shi, Xiaoyan; Lu, Tzu M.; Pan, Wei; Huang, S.H.; Liu, C.W.; Li, J.Y.

High quality Si/SiGe quantum well samples have provided an ideal platform to study the electron-electron (ee) interactions in two-dimensional electron systems (2DES). Currently, the sample mobility has surpassed 106 cm²/Vs and very low carrier densities are realized, which are crucial to reveal strong e-e interactions