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Reweighting of charge occupation incharge stability diagrams due to finite temperature effect and asymmetric tunnel ratesin a silicon MOS double quantum dot

Nguyen, Khoi T.; Carroll, M.S.; Lilly, Michael; Bishop, Nathaniel B.; Nielsen, Erik N.; Wendt, Joel R.; Dominguez, Jason; Pluym, Tammy; Stevens, Jeffrey; Ten Eyck, Gregory A.

Abstract not provided.