Publications Details

Lattice location of deuterium in plasma and gas charged Mg doped GaN

Wampler, William R.; Barbour, J.C.; Seager, Carleton H.; Myers, S.M.; Wright, Alan F.; Han, J.

The authors have used ion channeling to examine the lattice configuration of deuterium in Mg doped GaN grown by MOCVD. The deuterium is introduced both by exposure to deuterium gas and to ECR plasmas. A density functional approach including lattice relaxation, was used to calculate total energies for various locations and charge states of hydrogen in the wurtzite Mg doped GaN lattice. Computer simulations of channeling yields were used to compare results of channeling measurements with calculated yields for various predicted deuterium lattice configurations.