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Elimination of Fast Interface States Using Phosphorus Passivation in 4H-SiC MOS Capacitors for Improved Power MOSFET Performance and Reliability

Hughart, David R.; Kao, Wei-Chieh; Goryll, Michael; Jiao, Chunkun; Dhar, Sarit; Cooper, James; Schroder, Dieter; Atcitty, Stanley; Flicker, Jack D.; Marinella, Matthew; Kaplar, Robert

Abstract not provided.