Publications Details

Elimination of Fast Interface States Using Phosphorus Passivation in 4H-SiC MOS Capacitors for Improved Power MOSFET Performance and Reliability

Hughart, David R.; Kao, Wei-Chieh; Goryll, Michael; Jiao, Chunkun; Dhar, Sarit; Cooper, James; Schroder, Dieter; Atcitty, Stanley A.; Flicker, Jack D.; Marinella, Matthew J.; Kaplar, Robert K.

Abstract not provided.