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Actively Biased p-Channel MOSFET Studied with Scanning Capacitance Microscopy

Nakakura, Craig Y.; Hetherington, Dale L.; Shaneyfelt, Marty R.; Dodd, Paul E.

Scanning capacitance microscopy (SCM) was used to study the cross section of an operating p-channel MOSFET. We discuss the novel test structure design and the modifications to the SCM hardware that enabled us to perform SCM while applying dc bias voltages to operate the device. The results are compared with device simulations performed with DAVINCI.