Publications

We demonstrate that monolayer graphene transferred onto III-V semiconductor heterostructures induces strong quenching of the optical phonons in III-V semiconductor epilayers. Such graphene-induced optical phonon quenching is even stronger than that of thin metal films.

We study metamaterial-enhanced graphene photodetectors operating in the mid-IR to THz. The detector element consists of a graphene ribbon embedded within a dual-metal split ring resonator, which acts like a cavity to enhance the absorption of electromagnetic radiation by the graphene ribbon, while the asymmetric metal contacts enable photothermoelectric detection. The detectors we designed for the mid-IR demonstrate peak responsivity (referenced to total power) of ~120 mV/W at 1500 cm^-1 and are employed in the spectroscopic evaluation of vibrational resonances, thus demonstrating a key step toward a platform for integrated surface-enhanced sensing.

Abstract not provided.