We present a combined experimental and modeling study of the dependence of solution-based zinc oxide (ZnO) selective-area growth rates on pattern dimension. Selective growth is achieved by patterning a portion of the substrate with an organic template that inhibits growth. The density of ZnO nanorods and the mass grown per unit area of exposed surface increases as the distance between the exposed growth regions is increased and as the width of the exposed lines is decreased. A 2-D model was developed to calculate selective growth at the exposed surface regions, the loss of reactant material due to a competing reaction in solution, liquid-phase and surface diffusive mass transport to (or on) the growth surface, and the ZnO growth reaction at the surface. To explain the experimental results, we found it necessary to include a reaction by-product in the chemistry model, the desorption of which is the rate limiting step. A relatively simple, three-step reaction mechanism, combined with the species mass transport model, provides a good, semi-quantitative description of the experimental observations in the selective-area growth of ZnO from supersaturated solutions.
The vapor-liquid-solid growth process for synthesis of group-IV semiconducting nanowires using silane, germane, disilane and digermane precursor gases has been investigated. The nanowire growth process combines in situ gold seed formation by vapor deposition on atomically clean silicon (111) surfaces, in situ growth from the gaseous precursor(s), and real-time monitoring of nanowire growth as a function of temperature and pressure by a novel optical reflectometry technique. A significant dependence on precursor pressure and growth temperature for the synthesis of silicon and germanium nanowires is observed, depending on the stability of the specific precursor used. Also, the presence of a nucleation time for the onset of nanowire growth has been found using our new in situ optical reflectometry technique.
