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Tunable arrays of ZnO nanorods and nanoneedles via seed layer and solution chemistry

Crystal Growth and Design

Lee, Yun J.; Sounart, Thomas L.; Liu, Jun; Spoerke, Erik D.; McKenzie, Bonnie B.; Hsu, Julia W.; Voigt, James A.

We have systematically studied the effect of pH and 1,3-diaminopropane additive concentration on the morphology of ZnO nanorod and nanoneedle arrays grown in aqueous solution using a variety of seed layers. Increase in the growth solution pH from 6.8 to 13.2 resulted in a near doubling of the growth rate in the [0001] direction possibly due to attractive interaction between the zinc species and the growth surface at high pH, leading to nanorod arrays with reduced faceting and higher aspect ratios. Increases in 1,3-diaminopropane concentration initially enhanced and subsequently inhibited growth of tapered ZnO nanoneedles on seed layers consisting of ZnO nanoparticles, oriented ZnO films, or columnar facets of ZnO microrods. The final nanoneedle dimensions, packing density, and alignment were strongly affected by 1,3-diaminopropane concentration and seed layer type, which can be explained in terms of the relative strength of zinc chelation by 1,3-diaminopropane, the areal density of seeds, and other factors. The precise tuning of ZnO crystalline morphology via the control of seeding and growth conditions may be beneficial to many potential applications that require these aligned crystalline nanostructures. © 2008 American Chemical Society.

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Synthesis of silicon and germanium nanowires

Hsu, Julia W.

The vapor-liquid-solid growth process for synthesis of group-IV semiconducting nanowires using silane, germane, disilane and digermane precursor gases has been investigated. The nanowire growth process combines in situ gold seed formation by vapor deposition on atomically clean silicon (111) surfaces, in situ growth from the gaseous precursor(s), and real-time monitoring of nanowire growth as a function of temperature and pressure by a novel optical reflectometry technique. A significant dependence on precursor pressure and growth temperature for the synthesis of silicon and germanium nanowires is observed, depending on the stability of the specific precursor used. Also, the presence of a nucleation time for the onset of nanowire growth has been found using our new in situ optical reflectometry technique.

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Results 26–50 of 68
Results 26–50 of 68