Publications

Electron and negative ion densities have been measured in inductively coupled discharges containing C{sub 2}F{sub 6} and CHF{sub 3}. Line integrated electron density was determined using a microwave interferometer, negative ion densities were inferred using laser photodetachment spectroscopy, and electron temperature was determined using a Langmuir probe. For the range of induction powers, pressures and bias power investigated, the electron density peaked at 9 x 10{sup 12} cm{sup -2} (line-integrated) or approximately 9 x 10{sup 11} cm{sup -3}. The negative ion density peaked at approximately 1.3 x 10{sup 11} cm{sup -3}. A maximum in the negative ion density as a function of induction coil power was observed. The maximum is attributed to a power dependent change in the density of one or more of the potential negative ion precursor species since the electron temperature did not depend strongly on power. The variation of photodetachment with laser wavelength indicated that the dominant negative ion was F{sup -}. Measurement of the decay of the negative ion density in the afterglow of a pulse modulated discharge was used to determine the ion-ion recombination rate for CF{sub 4}, C{sub 2}F{sub 6} and CHF{sub 3} discharges.

In October 1996, an interdisciplinary team began a three-year LDRD project to study the plasma processes of reactive ion etching and plasma-enhanced chemical vapor deposition on large-area silicon devices. The goal was to develop numerical models that could be used in a variety of applications for surface cleaning, selective etching, and thin-film deposition. Silicon solar cells were chosen as the experimental vehicle for this project because an innovative device design was identified that would benefit from immediate performance improvement using a combination of plasma etching and deposition processes. This report presents a summary of the technical accomplishments and conclusions of the team.

The relative density of BCl radicals has been measured in a modified Applied Materials DPS metal etch chamber using laser-induced fluorescence. In plasmas containing mixtures of BCl{sub 3} with Cl{sub 2}, Ar and/or N{sub 2}, the relative BCl density was measured as a function of source and bias power, pressure, flow rate, BCl{sub 3}/Cl{sub 2} ratio and argon addition. To determine the influence of surface materials on the bulk plasma properties, the relative BCl density was measured using four different substrate types; aluminum, alumina, photoresist, and photoresist-patterned aluminum. In most cases, the relative BCl density was highest above photoresist-coated wafers and lowest above blanket aluminum wafers. The BCl density increased with increasing source power and the ratio of BCl{sub 3} to Cl{sub 2}, while the addition of N{sub 2} to a BCl{sub 3}/Cl{sub 2} plasma resulted in a decrease in BCl density. The BCl density was relatively insensitive to changes in the other plasma parameters.

Relative concentrations of reactive ions, neutral radicals, resist and substrate etch products have been measured in dielectric etch chemistries using an uncollided beam mass spectrometer / ion extractor from Hiden Analytical. Analysis techniques employed include both electron impact ionization and dissociative ionization of neutral gas, and potential bias extraction of positive ions from the reactor discharge volume. Measurements were made in C{sub 2}F{sub 6} and CHF{sub 3} discharges in an inductively coupled plasma (ICP-GEC) research reactor operating with power densities, pressures, gas compositions and wafer materials typical of those found in etch processing tools. Wafer substrates investigated included blanket silicon wafers and silicon wafers with varying amounts of photo-resist coverage of the surface (20%, 80% and 100%). In C{sub 2}F{sub 6} discharges CF{sub 3}{sup +} was consistently the dominant fluorocarbon ion present, in agreement with published cross sections for dissociative ionization [ 1,2.3,4.5,6]. Smaller concentrations of CF+, CF{sub 2}{sup -}, and C{sub 2}F{sub 5}{sup +}, were also observed, though the dissociative ionization production of C{sub 2}F{sub 5}{sup +} was a factor of five smaller than would be expected from published cross section values. The presence of photo-resist, even in small amounts, was found to produce marked changes in the discharge composition. For example in C{sub 2}F{sub 6} discharges, concentrations of SiF{sub x} etch products relative to concentrations of C{sub x}F{sub y} species were notably diminished and larger concentrations of water vapor were observed when resist was present. In CHF{sub 3} discharges, CF{sub 3}{sup +} and CHF{sub 2}{sup +} were found to be the main species present, along with smaller concentrations of CF{sub 2}{sup +}, CF{sup +}, CHF{sup +}, CH{sup +} and F{sup -}.

Plasma processing of microelectronic materials is strongly dependent on the generation and control of neutral radial and ion species generated in a plasma. For example, process uniformity across a #er is drken by a combination of plasma charged particle and neutral uniformity. Due to extensive rexarch and engineering the current generation of commercial plasma reactors can generate very radially uniform ion distributions, usually better than ~ 2 perwnt as determined by ion saturation measurements. Due in part to the difficulty associated with determining the neutral radial distributions, control of the neutral radical uniformity is less well developed. This abstract will review our recent measurements of the spatial distribution of severaI important atomic and molecukw species in inductively coupled plasmas through C12 / BCIJ / Ar containing gas mixtures. Measured species include the ground state Cl and BC1 densities as well as the metastable argon density. The fbeus of this review will be on the experimental techniques and results. In addition to assisting in the development of a fbndarnental understanding of the important pkunna physics, these measurements have been used to benchmark multi dimensional plasma discharge codes.

The laser characteristics of the 2.65 {mu}m xenon laser transition are reviewed. Measured and extrapolated laser efficiency in nuclear pumped and electron beam pumped system is reported. Previous research has indicated that the reported power efficiency is between 0.1 and 2 percent.

Fission-fragment pumped 1.73 {mu}m atomic xenon laser output was measured without changing the laser gas mixture before each reactor pulse. For a Ar/Xe gas mixture at 260 Torr and 0.3 percent xenon, no degradation in laser output was noted for five reactor pulses.

Reactor pumped lasers have the potential to be scaled to multi-megawatt power levels with long run times. In proposed designs, the laser will be capable of output powers of several megawatts of power for run times of several hours. Such a laser would have many diverse applications such as material processing, space debris removal and power beaming to geosynchronous satellites or the moon. However, before such systems can be designed, fundamental laser parameters such as small signal gain, saturation intensity and efficiency must be determined over a wide operational parameter space. We have recently measured fundamental laser parameters for a selection of nuclear pumped visible and near IR laser transitions in atomic neon, argon and xenon. An overview of the results of this investigation will be presented.

The FALCON Remote Laser Alignment System is used in a high radiation environment to adjust an optical assembly. The purpose of this report is to provide a description of the hardware used and to present the system configuration. Use of the system has increased the reliability and reproducibility of data as well as significantly reducing personnel radiation exposure. Based upon measured radiation dose, radiation exposure was reduced by at least a factor of two after implementing the remote alignment system.