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Turbocharging Quantum Tomography

Blume-Kohout, Robin J.; Laros, James H.; Nielsen, Erik N.; Maunz, Peter L.; Scholten, Travis L.; Rudinger, Kenneth M.

Quantum tomography is used to characterize quantum operations implemented in quantum information processing (QIP) hardware. Traditionally, state tomography has been used to characterize the quantum state prepared in an initialization procedure, while quantum process tomography is used to characterize dynamical operations on a QIP system. As such, tomography is critical to the development of QIP hardware (since it is necessary both for debugging and validating as-built devices, and its results are used to influence the next generation of devices). But tomography suffers from several critical drawbacks. In this report, we present new research that resolves several of these flaws. We describe a new form of tomography called gate set tomography (GST), which unifies state and process tomography, avoids prior methods critical reliance on precalibrated operations that are not generally available, and can achieve unprecedented accuracies. We report on theory and experimental development of adaptive tomography protocols that achieve far higher fidelity in state reconstruction than non-adaptive methods. Finally, we present a new theoretical and experimental analysis of process tomography on multispin systems, and demonstrate how to more effectively detect and characterize quantum noise using carefully tailored ensembles of input states.

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TYPE SAND Report YEAR 2015
DOIOSTI

Charge Sensed Pauli Blockade in a Metal–Oxide–Semiconductor Lateral Double Quantum Dot

Nano Letters

Nguyen, Khoi T.; Lu, Tzu-Ming L.; Muller, Richard P.; Carroll, Malcolm; Lilly, Michael L.; Nielsen, Erik N.; Bishop, Nathaniel B.; Young, Ralph W.; Wendt, J.R.; Dominguez, Jason J.; Pluym, Tammy P.; Stevens, Jeffrey S.

We report Pauli blockade in a multielectron silicon metal–oxide–semiconductor double quantum dot with an integrated charge sensor. The current is rectified up to a blockade energy of 0.18 ± 0.03 meV. The blockade energy is analogous to singlet–triplet splitting in a two electron double quantum dot. Built-in imbalances of tunnel rates in the MOS DQD obfuscate some edges of the bias triangles. A method to extract the bias triangles is described, and a numeric rate-equation simulation is used to understand the effect of tunneling imbalances and finite temperature on charge stability (honeycomb) diagram, in particular the identification of missing and shifting edges. A bound on relaxation time of the triplet-like state is also obtained from this measurement.

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TYPE Journal Article YEAR 2013
OSTIDOI

QCAD simulation and optimization of semiconductor double quantum dots

Nielsen, Erik N.; Gao, Xujiao G.; Kalashnikova, Irina; Muller, Richard P.; Salinger, Andrew G.; Young, Ralph W.

We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling quantum devices, particularly silicon double quantum dots (DQDs) developed for quantum qubits. The simulator has three di erentiating features: (i) its core contains nonlinear Poisson, e ective mass Schrodinger, and Con guration Interaction solvers that have massively parallel capability for high simulation throughput, and can be run individually or combined self-consistently for 1D/2D/3D quantum devices; (ii) the core solvers show superior convergence even at near-zero-Kelvin temperatures, which is critical for modeling quantum computing devices; (iii) it couples with an optimization engine Dakota that enables optimization of gate voltages in DQDs for multiple desired targets. The Poisson solver includes Maxwell- Boltzmann and Fermi-Dirac statistics, supports Dirichlet, Neumann, interface charge, and Robin boundary conditions, and includes the e ect of dopant incomplete ionization. The solver has shown robust nonlinear convergence even in the milli-Kelvin temperature range, and has been extensively used to quickly obtain the semiclassical electrostatic potential in DQD devices. The self-consistent Schrodinger-Poisson solver has achieved robust and monotonic convergence behavior for 1D/2D/3D quantum devices at very low temperatures by using a predictor-correct iteration scheme. The QCAD simulator enables the calculation of dot-to-gate capacitances, and comparison with experiment and between solvers. It is observed that computed capacitances are in the right ballpark when compared to experiment, and quantum con nement increases capacitance when the number of electrons is xed in a quantum dot. In addition, the coupling of QCAD with Dakota allows to rapidly identify which device layouts are more likely leading to few-electron quantum dots. Very efficient QCAD simulations on a large number of fabricated and proposed Si DQDs have made it possible to provide fast feedback for design comparison and optimization.

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TYPE SAND Report YEAR 2013
DOIOSTI

Non-abelian fractional quantum hall effect for fault-resistant topological quantum computation

Pan, Wei P.; Shi, Xiaoyan S.; Crawford, Matthew D.; Nielsen, Erik N.; Cederberg, Jeffrey G.

Topological quantum computation (TQC) has emerged as one of the most promising approaches to quantum computation. Under this approach, the topological properties of a non-Abelian quantum system, which are insensitive to local perturbations, are utilized to process and transport quantum information. The encoded information can be protected and rendered immune from nearly all environmental decoherence processes without additional error-correction. It is believed that the low energy excitations of the so-called =5/2 fractional quantum Hall (FQH) state may obey non-Abelian statistics. Our goal is to explore this novel FQH state and to understand and create a scientific foundation of this quantum matter state for the emerging TQC technology. We present in this report the results from a coherent study that focused on obtaining a knowledge base of the physics that underpins TQC. We first present the results of bulk transport properties, including the nature of disorder on the 5/2 state and spin transitions in the second Landau level. We then describe the development and application of edge tunneling techniques to quantify and understand the quasiparticle physics of the 5/2 state.

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TYPE SAND Report YEAR 2013
DOIOSTI

A many-electron tight binding method for the analysis of quantum dot systems

Journal of Applied Physics

Nielsen, Erik N.; Rahman, Rajib R.; Muller, Richard P.

We present a method which computes many-electron energies and eigenfunctions by a full configuration interaction, which uses a basis of atomistic tight-binding wave functions. This approach captures electron correlation as well as atomistic effects, and is well suited to solid state quantum dot systems containing few electrons, where valley physics and disorder contribute significantly to device behavior. Results are reported for a two-electron silicon double quantum dot as an example. © 2012 American Institute of Physics.

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TYPE Journal Article YEAR 2012
OSTIScopus

The QCAD framework for quantum device modeling

Computational Electronics (IWCE), 2012 15th International Workshop on

Gao, Xujiao G.; Nielsen, Erik N.; Muller, Richard P.; Young, Ralph W.; Salinger, Andrew G.; Carroll, Malcolm

We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling quantum devices, particularly Si double quantum dots (DQDs) developed for quantum computing. The simulator core includes Poisson, Schrodinger, and Configuration Interaction solvers which can be run individually or combined self-consistently. The simulator is built upon Sandia-developed Trilinos and Albany components, and is interfaced with the Dakota optimization tool. It is being developed for seamless integration, high flexibility and throughput, and is intended to be open source. The QCAD tool has been used to simulate a large number of fabricated silicon DQDs and has provided fast feedback for design comparison and optimization.

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TYPE Journal Article YEAR 2012
OSTIDOI

Configuration interaction calculations of the controlled phase gate in double quantum dot qubits

Physical Review B - Condensed Matter and Materials Physics

Nielsen, Erik N.; Muller, Richard P.; Carroll, Malcolm

We consider qubit coupling resulting from the capacitive coupling between two double quantum dot (DQD) singlet-triplet qubits. Calculations of the coupling when the two DQDs are detuned symmetrically or asymmetrically are performed using a full configuration interaction (CI). The full CI reveals behavior that is not observed by more commonly used approximations such as Heitler London or Hund Mulliken, particularly related to the operation of both DQDs in the (0,2) charge sector. We find that there are multiple points in detuning space where a two-qubit entangling gate can be realized, and that tradeoffs between coupling magnitude and sensitivity to fluctuations in detuning make a case for operating the gate in the (0,2) regime not commonly considered. © 2012 American Physical Society.

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TYPE Journal Article YEAR 2012
OSTIScopus
Results 101–168 of 168
Results 101–168 of 168