The ion photon emission microscope (IPEM) is a technique developed at Sandia National Laboratories (SNL) to study radiation effects in integrated circuits with high energy, heavy ions, such as those produced by the 88" cyclotron at Lawrence Berkeley National Laboratory (LBNL). In this method, an ion-luminescent film is used to produce photons from the point of ion impact. The photons emitted due to an ion impact are imaged on a position-sensitive detector to determine the location of a single event effect (SEE). Due to stringent resolution, intensity, wavelength, decay time, and radiation tolerance demands, an engineered material with very specific properties is required to act as the luminescent film. The requirements for this material are extensive. It must produce a high enough induced luminescent intensity so at least one photon is detected per ion hit. The emission wavelength must match the sensitivity of the detector used, and the luminescent decay time must be short enough to limit accidental coincidences. In addition, the material must be easy to handle and its luminescent properties must be tolerant to radiation damage. Materials studied for this application include plastic scintillators, GaN and GaN/InGaN quantum well structures, and lanthanide-activated ceramic phosphors. Results from characterization studies on these materials will be presented; including photoluminescence, cathodoluminescence, ion beam induced luminescence, luminescent decay times, and radiation damage. Results indicate that the ceramic phosphors are currently proving to be the ideal material for IPEM investigations.
The goal of this LDRD project is to develop a rapid first-order experimental procedure for the testing of advanced cladding materials that may be considered for generation IV nuclear reactors. In order to investigate this, a technique was developed to expose the coupons of potential materials to high displacement damage at elevated temperatures to simulate the neutron environment expected in Generation IV reactors. This was completed through a high temperature high-energy heavy-ion implantation. The mechanical properties of the ion irradiated region were tested by either micropillar compression or nanoindentation to determine the local properties, as a function of the implantation dose and exposure temperature. In order to directly compare the microstructural evolution and property degradation from the accelerated testing and classical neutron testing, 316L, 409, and 420 stainless steels were tested. In addition, two sets of diffusion couples from 316L and HT9 stainless steels with various refractory metals. This study has shown that if the ion irradiation size scale is taken into consideration when developing and analyzing the mechanical property data, significant insight into the structural properties of the potential cladding materials can be gained in about a week.
The development of a new radiation effects microscopy (REM) technique is crucial as emerging semiconductor technologies demonstrate smaller feature sizes and thicker back end of line (BEOL) layers. To penetrate these materials and still deposit sufficient energy into the device to induce single event effects, high energy heavy ions are required. Ion photon emission microscopy (IPEM) is a technique that utilizes coincident photons, which are emitted from the location of each ion impact to map out regions of radiation sensitivity in integrated circuits and devices, circumventing the obstacle of focusing high-energy heavy ions. Several versions of the IPEM have been developed and implemented at Sandia National Laboratories (SNL). One such instrument has been utilized on the microbeam line of the 6 MV tandem accelerator at SNL. Another IPEM was designed for ex-vacu use at the 88 cyclotron at Lawrence Berkeley National Laboratory (LBNL). Extensive engineering is involved in the development of these IPEM systems, including resolving issues with electronics, event timing, optics, phosphor selection, and mechanics. The various versions of the IPEM and the obstacles, as well as benefits associated with each will be presented. In addition, the current stage of IPEM development as a user instrument will be discussed in the context of recent results.
The ion photon emission microscope (IPEM), a new radiation effects microscope for the imaging of single event effects from penetrating radiation, is being developed at Sandia National Laboratories and implemented on the 88' cyclotron at Lawrence Berkeley National Laboratories. The microscope is designed to permit the direct correlation between the locations of high-energy heavy-ion strikes and single event effects in microelectronic devices. The development of this microscope has required the production of a robust optical system that is compatible with the ion beam lines, design and assembly of a fast single photon sensitive measurement system to provide the necessary coincidence, and the development and testing of many scintillating films. A wide range of scintillating material for application to the ion photon emission microscope has been tested with few meeting the stringent radiation hardness, intensity, and photon lifetime requirements. The initial results of these luminescence studies and the current operation of the ion photon emission microscope will be presented. Finally, the planned development for future microscopes and ion luminescence testing chambers will be discussed.
Radiation Effects Microscopy is an extremely useful technique in failure analysis of electronic parts used in radiation environment. It also provides much needed support for development of radiation hard components used in spacecraft and nuclear weapons. As the IC manufacturing technology progresses, more and more overlayers are used; therefore, the sensitive region of the part is getting farther and farther from the surface. The thickness of these overlayers is so large today that the traditional microbeams, which are used for REM are unable to reach the sensitive regions. As a result, higher ion beam energies have to be used (> GeV), which are available only at cyclotrons. Since it is extremely complicated to focus these GeV ion beams, a new method has to be developed to perform REM at cyclotrons. We developed a new technique, Ion Photon Emission Microscopy, where instead of focusing the ion beam we use secondary photons emitted from a fluorescence layer on top of the devices being tested to determine the position of the ion hit. By recording this position information in coincidence with an SEE signal we will be able to indentify radiation sensitive regions of modern electronic parts, which will increase the efficiency of radiation hard circuits.
Shielded special nuclear material (SNM) is very difficult to detect and new technologies are needed to clear alarms and verify the presence of SNM. High-energy photons and neutrons can be used to actively interrogate for heavily shielded SNM, such as highly enriched uranium (HEU), since neutrons can penetrate gamma-ray shielding and gamma-rays can penetrate neutron shielding. Both source particles then induce unique detectable signals from fission. In this LDRD, we explored a new type of interrogation source that uses low-energy proton- or deuteron-induced nuclear reactions to generate high fluxes of mono-energetic gammas or neutrons. Accelerator-based experiments, computational studies, and prototype source tests were performed to obtain a better understanding of (1) the flux requirements, (2) fission-induced signals, background, and interferences, and (3) operational performance of the source. The results of this research led to the development and testing of an axial-type gamma tube source and the design/construction of a high power coaxial-type gamma generator based on the {sup 11}B(p,{gamma}){sup 12}C nuclear reaction.
The ideal photon source for active interrogation of fissile materials would use monoenergetic photons to minimize radiation dose to surroundings. The photon energy would be high enough to produce relatively large photofission signals, but below the photoneutron threshold for common cargo materials in order to reduce background levels. To develop such a source, we are investigating the use of low-energy, proton-induced nuclear reactions to generate monochromatic, MeV-energy gamma-rays. Of particular interest are the nuclear resonances at 163 keV for the 11B(p,γ)12C reaction producing 11.7 MeV gamma-rays, 340 keV for the 19F(p,αγ)16O reaction producing 6.13 MeV photons, and 441 keV for the 7Li(p,γ)8Be reaction producing 14.8 and 17.7 MeV photons. A 700 keV Van de Graaff ion accelerator was used to test several potential (p,γ) materials and the gamma-ray yields from these targets were measured with a 5″ × 5″ NaI detector. A pulsed proton beam from the accelerator was used to induce prompt (neutron) and delayed (neutron and gamma-ray) photofission signals in uranium which were measured with 3He and NaI detectors. We show that the accelerator data is in good agreement with Monte Carlo radiation transport calculations and published results.
Obtaining particulate compositional maps from scanned PIXE (proton-induced X-ray emission) measurements is extremely difficult due to the complexity of analyzing spectroscopic data collected with low signal-to-noise at each scan point (pixel). Multivariate spectral analysis has the potential to analyze such data sets by reducing the PIXE data to a limited number of physically realizable and easily interpretable components (that include both spectral and image information). We have adapted the AXSIA (automated expert spectral image analysis) program, originally developed by Sandia National Laboratories to quantify electron-excited X-ray spectroscopy data, for this purpose. Samples consisting of particulates with known compositions and sizes were loaded onto Mylar and paper filter substrates and analyzed by scanned micro-PIXE. The data sets were processed by AXSIA and the associated principal component spectral data were quantified by converting the weighting images into concentration maps. The results indicate automated, nonbiased, multivariate statistical analysis is useful for converting very large amounts of data into a smaller, more manageable number of compositional components needed for locating individual particles-of-interest on large area collection media.
Electronic components such as bipolar junction transistors (BJTs) are damaged when they are exposed to radiation and, as a result, their performance can significantly degrade. In certain environments the radiation consists of short, high flux pulses of neutrons. Electronics components have traditionally been tested against short neutron pulses in pulsed nuclear reactors. These reactors are becoming less and less available; many of them were shut down permanently in the past few years. Therefore, new methods using radiation sources other than pulsed nuclear reactors needed to be developed. Neutrons affect semiconductors such as Si by causing atomic displacements of Si atoms. The recoiled Si atom creates a collision cascade which leads to displacements in Si. Since heavy ions create similar cascades in Si we can use them to create similar damage to what neutrons create. This LDRD successfully developed a new technique using easily available particle accelerators to provide an alternative to pulsed nuclear reactors to study the displacement damage and subsequent transient annealing that occurs in various transistor devices and potentially qualify them against radiation effects caused by pulsed neutrons.