Publications

Defects in silicon-on-insulator (SOI) buried oxides are normally considered deleterious to device operation. Similarly, exposing devices to hydrogen at elevated temperatures often can lead to radiation-induced charge buildup. However, in this work, we take advantage of as-processed defects in SOI buried oxides and moderate temperature hydrogen anneals to generate mobile protons in the buried oxide to form the basis of a ''protonic'' nonvolatile memory. Capacitors and fully-processed transistors were fabricated. SOI buried oxides are exposed to hydrogen at moderate temperatures using a variety of anneal conditions to optimize the density of mobile protons. A fast ramp cool down anneal was found to yield the maximum number of mobile protons. Unfortunately, we were unable to obtain uniform mobile proton concentrations across a wafer. Capacitors were irradiated to investigate the potential use of protonic memories for space and weapon applications. Irradiating under a negative top-gate bias or with no applied bias was observed to cause little degradation in the number of mobile protons. However, irradiating to a total dose of 100 krad(SiO{sub 2}) under a positive top-gate bias caused approximately a 100% reduction in the number of mobile protons. Cycling capacitors up to 10{sup 4} cycles had little effect on the switching characteristics. No change in the retention characteristics were observed for times up to 3 x 10{sup 4} s for capacitors stored unbiased at 200 C. These results show the proof-of-concept for a protonic nonvolatile memory. Two memory architectures are proposed for a protonic non-destructive, nonvolatile memory.

The authors have performed electron spin resonance and electrical measurements on SiO{sub 2}/Si structures subjected to anneals in 5% H{sub 2}/N{sub 2} or 5% D{sub 2}/N{sub 2} gases and subsequently injected with electrons using corona ions and ultra-violet radiation. Threshold voltage and transconductance measurements have also been made on 0.25 {micro}m metal-oxide-semiconductor transistors subjected to 400 C anneals in the same gases and subsequently aged by hot electron injection. The electrical data on SiO{sub 2}/Si structures indicates that the density of interface states increases as a result of electron injection but that there are only minor differences between H and D passivated interfaces. The data on P{sub b}, trivalent Si dangling bond, centers at the same interfaces observed by electron spin resonance is insufficiently accurate to enable them to observe any significant differences. The hot electron injection experiments on transistors, consistent with other authors, indicate that, for the limited number of measurements they have made, the transistor aging resulting from the generation of interface states is significantly reduced for devices annealed in the D containing gas as compared to those annealed in the H containing gas. The origins of some potential differences in annealing behavior between the SiO{sub 2}/Si structures and the 0.25 {micro}m transistors are suggested.

Hot electron induced degradation in 0.25 μm n-channel MOSFETs annealed in H2 or D2 containing atmospheres is reported. Threshold voltage and channel transconductance variations correlate with the growth of the interface state density evidenced by charge pumping measurements. The transistor lifetime (for a given transconductance variation) is ∼ 10-40 times shorter for H2 as opposed to D2 annealed devices.

In this work we show that annealing of silicon/silicon-dioxide/silicon structures in forming gas (N{sub 2}:H{sub 2}; 95:5) above 500{degrees}C leads to spontaneous incorporation of mobile H{sup +} ions in the buried SiO{sub 2} layer. We demonstrate that, unlike the alkali ions feared as killer contaminants in the early days, the space charge distribution of these mobile protons within the buried oxide layer can be very well controlled and easily rearranged with relatively high speed at room temperature. The hysteresis in the flat band voltage shift provides a unique vehicle to study proton kinetics in silicon dioxide thin films. It is further shown how this effect can be used as the basis for a reliable nonvolatile FET memory device that has potential to be competitive with state-of-the-art Si-based memory technologies. The power of this novel device is its simplicity; it requires few processing steps, all of which are standard in Si integrated-circuit fabrication.

Ab initio Hartree-Fock and second-order Moeller-Plesset theory calculations have been performed to investigate the stability of triply-coordinated O{sup +} centers in the Si-O-Si network of amorphous SiO{sub 2}. The calculations reveal that the H{sup +} ion binds with a bridging O center to form a very stable (D{sub e} > 6 eV) trivalent O complex. Capture of an electron by the positively charged protonated complex, however, is predicted to immediately lead to the dissociation of the O-H bond. A relatively weaker, but stable bond is also formed between the bridging O atom and a {sup +}SiH{sub 3} ion.

We review the processes and mechanisms by which voltage offsets occur in the hysteresis loop of ferroelectric materials. Simply stated, voltage shifts arise from near-interfacial charge trapping in the ferroelectric. We show that the impetus behind voltage shifts in ferroelectric capacitors is the net polarization, with the net polarization being determined by the perovskite and the aligned defect-dipole components. Some common defect-dipoles in the PZT system are lead vacancy-oxygen vacancy complexes. One way to change the net polarization in the ferroelectric is to subject the PZT capacitor to a dc bias at elevated temperature; this process is spectroscopically shown to align defect-dipoles along the direction of the applied electric field. The alignment of defect-dipoles can strongly impact several material properties. One such impact is that it can lead to enhanced voltage shifts (imprint). It is proposed that the net polarization determines the spatial location of the asymmetrically trapped charge that are the cause for the voltage shifts. An enhanced polarization at one electrode interface can lead to larger voltage shifts since it lowers the electrostatic potential well for electron trapping, i.e., more electron trapping can occur. Defect-dipole alignment is also shown to increase the UV sensitivity of the ferroelectric.

We apply a number of complementary characterization techniques including electron paramagnetic resonance, optical absorption, and photoluminescence spectroscopies to characterize a wide range of different ZnO phosphor powders. We generally observe a good correlation between the 510-nm green emission intensity and the density of paramagnetic isolated oxygen vacancies. In addition, both quantities are found to peak at a free-carrier concentration ne, of about 1.4×1018 cm-3. We also find that the green emission intensity can be strongly influenced by free-carrier depletion at the particle surface, especially for small particles and/or low doping. Our data suggest that the green PL in ZnO phosphors is due to the recombination of electrons in singly occupied oxygen vacancies with photoexcited holes in the valence band.

A remediation of a gas cylinder disposal pit at Sandia National Laboratories, New Mexico has recently been completed. The cleanup prevented possible spontaneous releases of hazardous gases from corroded cylinders that may have affected nearby active test areas at Sandia`s Technical Area III. Special waste management, safety, and quality plans were developed and strictly implemented for this project. The project was conceived from a waste management perspective, and waste minimization and management were built into the planning and implementation phases. The site layout was planned to accommodate light and heavy equipment, storage of large quantities of suspect soil, and special areas to stage and treat gases and reactive chemicals removed from the pit, as well as radiation protection areas. Excavation was a tightly controlled activity using experienced gas cylinder and reactive chemical specialists. Hazardous operations were conducted at night under lights, to allow nearby daytime operations to function unhindered. The quality assurance plan provided specific control of, and documentation for, critical decisions, as well as the record of daily operations. Both hand and heavy equipment excavation techniques were utilized. Hand excavation techniques were utilized. Hand excavation techniques allows sealed glass containers to be exhumed unharmed. In the end, several dozen thermal batteries; 5 pounds (2.3 kg) of lithium metal; 6.6 pounds (3.0 kg) of rubidium metal; several kilograms of unknown chemicals; 140 cubic yards (107 cubic meters) of thorium-contaminated soil; 270 cubic yards (205 cubic meters) of chromium-contaminated soil; and 450 gas cylinders, including 97 intact cylinders containing inert, flammable, toxic, corrosive, or oxidizing gases were removed and effectively managed to minimize waste.

Switchable polarization can be significantly suppressed in ferroelectric (FE) materials by optical, thermal, and electrical processes. The thermal process can occur by either annealing the FE in a reducing environment or by heating it in air to 100 °C while impressing a bias near the switching threshold. The optical process occurs while biasing the FE near the switching threshold and illuminating with bandgap light. And the electrical suppression effect occurs by subjecting the FE to repeated polarization reversals. Using electron paramagnetic resonance, polarization-voltage measurements, and charge injection scenarios, we have been able to elucidate both electronic and ionic trapping effects that lead to a suppression in the amount of switchable polarization in FE materials. The relative roles of electronic and ionic effects in the same material can depend on the stress condition. For instance, in oxidized BaTiO3 crystals, optical and thermal suppressions occur by electronic domain pinning; electrical fatigue in the BaTiO3 crystals also appears to involve electronic charge trapping, however, it is suggested that these electronic traps are further stabilized by nearby ionic defects. In sol-gel PZT thin films with either Pt, RuO2, or La-Sr-Co-O electrodes it appears that the polarization suppression induced by electrical fatigue, a temperature/bias combination, or a light/bias combination are all primarily due to the trapping of electronic charge carriers to first order.

Recent research on point defects in thin films of SiO{sub 2} and Si{sub 3}SN{sub 4} on Si is presented and reviewed. In SiO{sub 2} it is now clear that no one type of E{prime} center is the sole source of radiation-induced positive charge; hydrogenous moieties or other types of E{prime} are proposed. Molecular orbital theory and easy passivation of E{prime} by H{sub 2} suggest that released H might depassivate P{sub b} sites. A charged E{prime}{sub {delta}} center has been seen in Cl-free SIMOX and thermal oxide film, and it is reassigned to an electron delocalized over four O{sub 3}{equivalent_to}Si units around a fifth Si. In Si{sub 3}N{sub 4} a new model for the amphoteric charging of Si{equivalent_to}N{sub 3} moieties is based on local shifts in defect energy with respect to the Fermi level, arising from nonuniform composition; it does not assume negative-U electron correlation. A new defect NN{sub 2}{sup 0} has been identified, with dangling orbital on a 2-coordinated N atom bonded to another N.

High-temperature post-oxidation annealing of poly-Si/SiO2/Si structures such as metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field effect transistors is known to result in enhanced radiation sensitivity, increased 1/f noise, and low field breakdown. We have studied the origins of these effects from a spectroscopic standpoint using electron paramagnetic resonance (EPR) and atomic force microscopy. One result of high temperature annealing is the generation of three types of paramagnetic defect centers, two of which are associated with the oxide close to the Si/SiO2 interface (oxygen-vacancy centers) and the third with the bulk Si substrate (oxygen-related donors). In all three cases the origin of the defects may be attributed to out-diffusion of O from the SiO2 network into the Si substrate with associated reduction of the oxide. We present a straightforward model for the interfacial region which assumes the driving force for O out-diffusion is the chemical potential difference of the O in the two phases (SiO2 and the Si substrate). Experimental evidence is provided to show that enhanced hole trapping and interface-trap and border-trap generation in irradiated high-temperature annealed Si/SiO2/Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies.

Photocreation mechanisms and properties of nitrogen dangling bonds in amorphous hydrogenated silicon nitride (a-SiN{sub x}:H) thin films are investigated. We find that the creation kinetics are strongly dependent on the post-deposition anneal; this thermal process can be described by a simple exponential function which yields an activation energy of 0.8 eV. The compositional dependence of the nitrogen dangling bond center suggests that its energy level lies close to the valence band edge, in agreement with theoretical calculations. This energy level position can explain why a-SiN{sub x}:H films often become conducting following a high post-deposition anneal.

Short communication.

Woven Kevlar fabrics exhibit a number of beneficial mechanical properties which include strength, flexibility, and relatively low density. The desire to engineer or design Kevlar fabrics for specific applications has stimulated interest in the development of theoretical models which relate their effective mechanical properties to specific aspects of the fabric morphology and microstructure. In this work the author provides a theoretical investigation of the large deformation elastic response of a plane woven Kevlar fabric and compares these theoretical results with experimental data obtained from uniaxially loaded Kevlar fabrics. The theoretical analysis assumes the woven fabric to be a regular network of orthogonal interlaced yarns and the individual yarns are modeled as extensible elastica, thus coupling stretching and bending effects at the outset. This comparison of experiment with theory indicates that the deformation of woven fabric can be quite accurately predicted by modeling the individual yarns as extensible elastica. 2 refs., 1 fig.

The electron photo-excitation from the K- state and its subsequent trapping by K+ state is probably at the origin of the silicon dangling bonds (K0) formation during broad-band UV illumination of the N-rich amorphous silicon nitride films. Because the photo-excited electron will move towards the metal electrode the positive charge is expected to accumulate near the nitride-silicon interface with illumination time. Our data also suggest that the N-H group may be at the origin of the nitrogen dangling bonds creation in N-rich films. © 1991 Elsevier Science Publishers B.V. All rights reserved.

The large deformation elastic response of a plane woven Kevlar fabric is investigated analytically and experimentally. The analysis assumes the undeformed geometry to be a sequence of interlaced arcs of circles which reverse at each yarn midpoint, ad each yarn is modeled as an extensible elastical subject to certain compatibility conditions. Deflection-force relations for the fabric are determined in terms of the initial weave geometry and the elastic properties of the individual yarns. The theoretical results agree well with the results of experiments performed on a fabric woven from 400 denier Kevlar yarns under conditions of uniaxial loading in both warp and fill directions. 13 refs., 4 figs.

The use of a negative coefficient of thermal expansion (CTE) mineral filler ({beta}-eucryptite) is examined as a means of reducing CTE of a bismaleimide polymer (Kerimid 601). Results show that {beta}-eucryptite is effective in lowering CTE of the polymer and of glass fabric composites with a filled matrix phase. A theoretical model is presented that effectively predicts CTE of the filled BMI but underestimates the observed results by approximately 15%. The lower predicted CTE is believed to be due to poor interfacial adhesion at the {beta}-eucryptite/bismaleimide interface. Poor interfacial adhesion is supported by ultimate tensile strength results. 27 refs., 7 figs., 3 tabs.

The in-plane linear elastic constants of woven fabric are determined in terms of the specific fabric microstructure. The fabric is assumed to be a spatially periodic interlaced network of orthogonal yarns and the individual yarns are modeled as extensible elastica. These results indicate that a significant coupling of bending and stretching effects occurs during deformation. Results of this theoretical analysis compare favorable with measured in-plane elastic constants for Vincel yarn fabrics. 17 refs., 2 figs., 1 tab.