Publications

Abstract not provided.

The assembly and packaging of MEMS (Microelectromechanical Systems) devices raise a number of issues over and above those normally associated with the assembly of standard microelectronic circuits. MEMS components include a variety of sensors, microengines, optical components, and other devices. They often have exposed mechanical structures which during assembly require particulate control, free space in the package, non-contact handling procedures, low-stress die attach, precision die placement, unique process schedules, hermetic sealing in controlled environments (including vacuum), and other special constraints. These constraints force changes in the techniques used to separate die on a wafer, in the types of packages which can be used, in the assembly processes and materials, and in the sealing environment and process. This paper discusses a number of these issues and provides information on approaches being taken or proposed to address them.

This part of the Short Course will review the basic mechanisms for radiation effects in semiconductor devices. All three areas of radiation damage will be considered -- total dose, displacement effects, and single event effects. Each of these areas will be discussed in turn. First an overview and background will be provided on the historical understanding of the damage mechanism. Then there will be a discussion of recent enhancements to the understanding of those mechanisms and an up-to-date picture provided of the current state of knowledge. Next the potential impact of each of these damage mechanisms on devices in emerging technologies and how the mechanisms may be used to understand device performance will be described, with an emphasis on those likely to be of importance in the new millennium. Finally some additional thoughts will be presented on how device scaling expected into the next century may impact radiation hardness.

This report is an overview of advanced nonvolatile memory technologies. The memory technologies discussed are: floating gate nonvolatile memory technologies; SNOS nonvolatile technology; ferroelectric technology; and thin film magnetic memories.