Publications

Oxygen ion beam bombardment has been studied as a means for incorporating oxygen into thin films of Y-Ba-Cu-oxide either by enhancing the transport of oxygen to substrates during ion-beam sputtering, or by direct incorporation of oxygen by ion-assisted deposition. Optical emission spectroscopy was used to study the ion-beam bombardment of bulk superconducting targets as the oxygen content of the ion beam was varied between 0% (pure argon) and 100% oxygen. This showed that oxygen did not directly combine with metallic elements in the target to increase the oxygen content of the stream of particles moving toward the substrate. The oxygen content of the sputter beam did, however, change the relative emission intensity from the various target components. Addition of a second ion beam directing an oxygen beam toward the substrate as the film is grown, caused large variations in the stoichiometry of the deposited films. At low ion currents, no increase in the oxygen content of the films was detected, while at relatively high currents, the oxygen incorporation increased. However, the sputtering of the metallic components of the film increased, leading to very low growth rates. 8 refs., 5 figs.