Publications Details
Uv-induced degradation of the Si-SiO sub 2 interface: Applications to the point contact solar cell
Prior research has concentrated on damage at the Si--SiO{sub 2} interface caused by photoinjection of electrons into the oxide by near UV light. The damage processes involved may be similar to those responsible for degradation in the Stanford type, point contact solar cell (PCSC). 7 refs., 6 figs.