Publications Details
The use of novel organometallic sources in metal organic chemical vapor deposition (MOCVD)
Alternate organometallic Sb sources are being investigated to improve the characteristics of InSb grown by MOCVD. InSb grown using trimethylindium (TMIn) and trimethylantimony (TMSb) or triethylantimony (TESb) yielded similar quality materials under similar growth conditions. InSb grown using triethylindium (TEIn) and TESB under similar growth conditions yielded very poor quality n-type material. Three new organometallic Sb sources, triisopropyl-antimony (TIPSb), tris(dimethylamino)antimony (TDMASb), and tertiarybutyldimethylantimony (TBDMSb) are being investigated. Growth of InSb using TIPSb, TDMASb, or TBDMSb and TMIn was investigated over 350 to 475{degrees}C. InSb grown from TDMASb had similar properties to InSb grown from TMIn and TMSb when using a similar temperature and V/III ratio range. Growth rates of InSb using TMIn and either TIPSb or TBDMSb at temperatures {le} 425{degrees}C were proportional to both TMIn flow rate and temperature. Surface morphology of InSb grown using either TIPSb or TBDMSb was rough for growth temperatures {le} 425{degrees}C; this may be due to complex decomposition and methyl groups on surface. The InSb with the highest mobility was grown at 400{degrees}C and a V/III ratio of 3 using TIPSb. It was n-type with a carrier concentration of 2.5 {times} 10{sup 15} cm{sup {minus}3} and a mobility of 78,160 cm{sup 2}/Vs at 77 K. Both n- and p-type InSb were grown using TBDMSb with mobilities up to 67,530 and 7773 cm{sup 2}/Vs, respectively at 77 K. Mobility for InSb using either TIPSb or TBDMSb was optimized by going to lower temperatures, pressures, V/III ratios; however, surface morphology improved with higher temperature, pressure, V/III ratio. High mobility InSb with smooth surfaces at T {le} 425{degrees}C was not obtained with TIPSb or TBDMSb and TMIn.