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The preparation of InAsSb/InSb SLS (strained-layer superlattice) and InSb photodiodes by MOCVD
Infrared absorption and photoluminescence have been demonstrated for InAs{sub 1-x}Sb{sub x}/InSb strained-layer superlattices (SLS's) in the 8--15 {eta}m region for As content less than 20%. This extended infrared activity is due to the type II heterojunction band offset in these SLS's. The preparation of the first MOCVD grown p-n junction diode was achieved by using dimethyltellurium as an in-type dopant. Several factors, such as background doping and dopant profiles affect the performance of this device. InSb diodes have been prepared using tetraethyltin. The resulting current-voltage characteristics are improved over those of diodes grown previously using dimethyltellurium. Doping levels of 8 {times} 10{sup 15} to 5 {times} 10{sup 18} cm{sup {minus}3} and mobilities of 6.7 {times} 10{sup 4} to 1.1 {times} 10{sup 4} cm{sup 2}/Vs have been measured for Sn doped InSb. SLS diode structures have been prepared using Sn and Cd as the dopants. Structures prepared with p-type buffer layers are more reproducible. 5 refs., 4 figs.