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Spectroscopic investigations of band offsets of MgO|AlxGa1-xN epitaxial heterostructures with varying AlN content

Paisley, Elizabeth A.; Brumbach, Michael T.; Allerman, A.A.; Atcitty, Stanley A.; Baca, A.G.; Armstrong, Andrew A.; Kaplar, Robert K.; Ihlefeld, Jon I.

Epitaxial (111) MgO films were prepared on (0001) AlxGa1-xN via molecular-beam epitaxy for x=0 to x=0.67. Valence band offsets of MgO to AlxGa1-xN were measured using X-ray photoelectron spectroscopy as 1.65±0.07eV, 1.36±0.05eV, and 1.05±0.09eV for x=0, 0.28, and 0.67, respectively. This yielded conduction band offsets of 2.75eV, 2.39eV, and 1.63eV for x=0, 0.28, and 0.67, respectively. All band offsets measured between MgO and AlxGa1-xN provide a>1eV barrier height to the semiconductor.