Publications Details

Soft Error Characterization of D-FFs at the 5-nm Bulk FinFET Technology for the Terrestrial Environment

Xiong, Y.; Feeley, A.; Pieper, N.J.; Ball, D.R.; Narasimham, B.; Brockman, J.; Dodds, Nathaniel A.; Wender, S.A.; Wen, S.J.; Fung, R.; Bhuva, B.L.

Soft error rates (SER) are characterized for the 5-nm bulk FinFET D flip-flops for alpha particles, thermal neutrons, and high-energy neutrons as a function of supply voltage. At nominal operating voltage, the 5-nm node has higher SER than the 7-nm node for all three particle types, with increases of 148%, 168%, and 26%, respectively. The overall SER for the 5-nm node was ~2X greater than that of the 7-nm node, because the reduction in critical charge was higher than that in collected charge. For alpha particle exposures, temperature effects on SER were more prominent for the 5-nm node than both the 7-nm and 16-nm node. Relative contribution of alpha particle SER increases with scaling, and it accounts for 13% of the overall SER at the 5-nm node.