Publications Details
Radiation characterization of a 28C256 EEPROM
28C256 EEPROM total dose and dose-rate results are presented. Mode dependent total dose failure occurred at 9.5 krad(Si) when writing and 33 krad(Si) when reading. Average upset and latch-up thresholds were 3.8 /times/ 10/sup 8/ rad(Si)/s and 7.7 /times/ 10/sup 8/ rad(Si)/s, respectively. 3 refs., 5 tabs.