Publications Details
Optically controlled current filamentation in GaAs photoconductive semiconductor switches
The use of focused laser beams and fiber optics to control the location and density of current filaments in GaAs photoconductive semiconductor switches (PCSS) is described in this paper. An intensified CCD camera is used to monitor the infrared photoluminescence of the filaments during fast initiation of high gain switching for several sizes of lateral GaAs PCSS (e.g. 0.5×5, 1×5, 2.5×5, 2×30, and 15×20 mm2). The switches are triggered with either a focused, mode-locked, Nd:YAG laser (532 and 1064 nm) or fiber-optically coupled semiconductor laser diodes (approximately 900 nm). The dependencies of the size, location, and density of the current filaments on the optical trigger, switch voltage, and switch current will be discussed. The impact of optically controlled current filaments on device design and lifetime is emphasized. Electro-optical switching amplification is demonstrated using the high gain switching mode of GaAs (lock-on). A single semiconductor laser diode is used to trigger a small GaAs PCSS. This PCSS is used to drive a 15-element laser diode array. Both electrical and optical pulse compression, sharpening, and amplification are achieved. Estimates for electrical and optical power gains are 8000 and 750 respectively.