Publications Details
Optical determinations of energy-band dispersion curves in novel compound semiconductor materials
We present magnetoluminescence data which provides a quantitative measure of the energy- band dispersion curves of novel compound semiconductor optoelectronic materials. Data for a n-type strained-layer InGaAs/GaAs (quantum-well width approximately 8 nm) and a n-type 4.5 nm-wide GaAs/AlGaAs lattice-matched single-quantum well are presented. We find that the conduction-bands are almost parabolic, with a mass of about 0.068m0 for the GaAs/AlGaAs structure. The valence-bands are nonparabolic with wave vector dependent in- plane valence-band masses varying from about 0.1m0 at zone center to about 0.3m0 for 20 meV energies.