Publications Details
Next Generation Thin Films for Photovoltaics: InGaAsN
A new semiconductor alloy system, InGaAsN, has been identified as a can- didate material for multi junction solar cells having efficiencies greater than 40%. The introduction of small amounts of nitrogen ( 2%) into the InGaAs alloy system greatly reduces the band gap energy, with reductions approaching 0.4 eV for 2% nitrogen content With the appropriate ratio of indium to nitrogen concentrations, InGaAsN can be lattice matched to GaAs.