Publications Details
Modeling excitation-dependent bandstructure effects on InGaN light-emitting diode efficiency
Bandstructure properties in wurtzite quantum wells can change appreciably with changing carrier density because of screening of quantumconfined Stark effect. An approach for incorporating these changes in an InGaN light-emitting-diode model is described. Bandstructure is computed for different carrier densities by solving Poisson and k·p equations in the envelop approximation. The information is used as input in a dynamical model for populations in momentum-resolved electron and hole states. Application of the approach is illustrated by modeling device internal quantum efficiency as a function of excitation. © 2011 Optical Society of America.