Publications Details

Metalorganic Vapor-Phase Epitaxial Growth and Characterization of Quaternary AlGaInN

Han, J.; Figiel, J.J.; Crawford, Mary H.; Banas, Michael A.; Peterson, Gary D.; Myers, S.M.; Lee, Stephen R.

In this letter we report the growth (by MOVPE) and characterization of quaternary AlGaInN. A combination of PL, high-resolution XRD, and RBS characterizations enables us to explore and delineate the contours of equil-emission energy and lattice parameters as functions of the quaternary compositions. The observation of room temperature PL emission as short as 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GdnN MQW heterostructures have also been grown; both x-ray diffraction and PL measurement suggest the possibility of incorporating this quaternary into optoelectronic devices.