Publications Details
Magnetic field dependent photoluminescence studies of InGaAs/GaAs strained-single-quantum wells
Magnetoluminescence determined conduction-band and valence-band dispersion curves are presented for n-type InGaAs/GaAs stained-single-quantum well structures. The magnetic field range was 0 to 30 tesla, and the temperature varied between 4.2 and 77.4 K.