Publications Details

Low-Frequency Noise and Deep Level Transient Spectroscopy in n-p-n Si Bipolar Junction Transistors Irradiated with Si Ions

Luo, Xuyi; Montes, Jossue; Koukourinkova-Duncan, Sabina; Vaandrager, Bastiaan L.; Bielejec, Edward S.; Vizkelethy, Gyorgy V.; Schrimpf, Ronald D.; Fleetwood, Daniel M.; Zhang, En X.

The properties of defects in n-p-n Si bipolar junction transistors (BJTs) caused by 17-MeV Si ions are investigated via current-voltage, low-frequency (LF) noise, and deep level transient spectroscopy (DLTS) measurements. Four prominent radiation-induced defects in the base-collector junction of these transistors are identified via DLTS. At least two defect levels are observed in temperature-dependent LF 1/f noise measurements, one that is similar to a prominent defect in DLTS and another that is not. Defect microstructures are discussed. Our results show that DLTS and 1/f noise measurements can provide complementary information about defects in linear bipolar devices.