Publications Details

Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation

Schwank, James R.; Shaneyfelt, Marty R.; Meisenheimer, Timothy L.; Dodd, Paul E.

High-energy ion-irradiated 3.3-nm oxynitride film and 2.2-nm SiO2-film MOS capacitors show premature break-down during subsequent electrical stress. This degradation in breakdown increases with increasing ion linear energy transfer (LET), increasing ion fluence, and decreasing oxide thickness. The reliability degradation due to high-energy ion-induced latent defects is explained by a simple percolation model of conduction through SiO2 layers with irradiation and/or electrical stress-induced defects. Monitoring the gate-leakage current reveals the presence of latent defects in the dielectric films. These results may be significant to future single-event effects and single-event gate rupture tests for MOS devices and ICs with ultrathin gate oxides.