Publications Details
In situ particle generation during reactive ion etching of SiO sub 2
Particulate contamination during IC fabrication is generally acknowledged as a major contributor to yield loss. In particular, plasma processes have the potential for generating copious quantities of process induced particulates. Ideally, in order to effectively control process generated particulate contamination, a fundamental understanding of the particulate generation and transport is essential. Although a considerable amount of effort has been expended to study particles in laboratory apparatus, only a limited amount of work has been performed in production line equipment with production processes. In these experiments, a Drytek Quad Model 480 single wafer etcher was used to etch blanket thermal SiO{sub 2} films on 150 mm substrates in fluorocarbon discharges. The effects of rf power, reactor pressure, and feed gas composition on particle production rates were evaluated. Particles were measured using an HYT downstream particle flux monitor. Surface particle deposition was measured using a Tencor Surfscan 4500, as well as advanced ex situ techniques. Particle morphology and composition were also determined ex situ. Response surface methodology was utilized to determine the process conditions under which particle generation was most pronounced. The use of in situ and ex situ techniques has provided some insight into the mechanisms involved for particle generation and particle dynamics within the plasma during oxide etching.