Publications Details
High microwave power ECR etching of III-V semiconductors in CH{sub 4}/H{sub 2}/Ar
Etch rates up to 7000{angstrom}/min for InP and 3500{angstrom}/min for GaAs are obtained for high microwave power (1000W) CH{sub 4}/H{sub 2}/Ar Electron Cyclotron Resonance plasma etching. Preferential loss of the group V element leads to nonstoichiometric, unacceptably rough surfaces on In-based binary semiconductors at microwave powers {ge}400W, regardless of plasma composition. Both Ga- and Al-based materials retain smooth, stoichiometric surfaces even at I000W, but the rates are still much slower than for C1{sub 2} plasma chemistries. The results suggest that CH{sub 4}/H{sub 2} plasmas are not well suited to ECR systems operating at high powers.