Publications Details
Generation of Chloride Active Defects at the Aluminum Oxide Surface for the Study of Localized Corrosion Initiation
The generation of surface defects on electron cyclotron resonance (ECR) plasma derived aluminum oxide films has been studied. We find that Cl active O vacancies can be generated using electron and ion irradiation yielding surface concentrations of 3 xl 013 to 1X1014 sites"cm-2. These values correspond to surface defect concentrations of 3 to 10% when compared to ordered, crystalline u-alumina. The vacancies appear to be responsible for increased surface O concentrations when immersed in water. Anodic polarization of irradiated films yields a decrease in the stable pitting potential which correlates with electron dose.