Publications Details
Fermi level effects on dislocation formation in InAs{sub 1-x}Sb{sub x} grown by MOCVD
Dislocation formation in InAs{sub 1-x}Sb{sub x} buffer layers grown by metal-organic chemical vapor deposition is shown to be reproducibly enhanced by p-type doping at levels greater than or equal to the intrinsic carrier concentration at the growth temperature. To achieve a carrier concentration greater than 2 {times} 10{sup 18} cm{sup {minus}3}, the intrinsic carrier concentration of InSb at 475 C, p-type doping with diethylzinc was used. Carrier concentrations up to 6 {times} 10{sup 18} cm{sup {minus}3} were obtained. The zinc doped buffer layers have proven to be reproducibly crack free for InAs{sub 1-x}Sb{sub x} step graded buffer layers with a final composition of x = 0.12 and a strained layer superlattice with an average composition of x = 0.09. These buffer layers have been used to prepare SLS infrared photodiodes. The details of the buffer layer growth, an explanation for the observed Fermi level effect and the growth and characterization of an infrared photodiode are discussed.