Publications Details

Fabrication of Position Controlled Si/SiGe Quantum Dots for Integrated Optical Sources and Beyond

Sapkota, Keshab R.; Wang, George T.; Jones, Kevin; Turner, Emily

Recent work done at the University of Florida (UF) revealed a tremendously enhanced germanium diffusion process along silicon/silicon dioxide interfaces during oxidizing anneals, allowing for the controlled formation of Si quantum wires. This project seeks to further explore this unusual germanium behavior during oxidation for the purpose of forming unique and useful nano and quantum structures. Specifically, we propose here to demonstrate for the first time that this phenomenon can be extended to realize OD Si nanostructures through the oxidation of axially heterostructured vertical Si/SiGe pillars. Such structures could be of great interest for applications in integrated optoelectronics, beyond Moore's Law computing, and quantum computing.