Publications Details

Depth and Thermal Stability of Dry Etch Damage in GaN Schottky Diodes

Shul, Randy J.

GaN Schottky diodes were exposed to N₂ or H₂ Inductively Coupled Plasmas prior to deposition of the rectifying contact. Subsequent annealing, wet photochemical etching or (NH₄)₂S surface passivation treatments were examined for their effect on diode current- voltage characteristics. We found that either annealing at 750 °C under N₂, or removal of ~500-600 Å of the surface essentially restored the initial I-V characteristics. There was no measurable improvement in the plasma-exposed diode behavior with (NH₄)₂S treatments.