Publications Details
Comparative hot carrier induced degradation in 0,25 μm MOSFETs with H or D passivated interfaces
Hot electron induced degradation in 0.25 μm n-channel MOSFETs annealed in H2 or D2 containing atmospheres is reported. Threshold voltage and channel transconductance variations correlate with the growth of the interface state density evidenced by charge pumping measurements. The transistor lifetime (for a given transconductance variation) is ∼ 10-40 times shorter for H2 as opposed to D2 annealed devices.