Publications Details
Combining the best of bulk and surface micromachining using Si {111} substrates
This process combines the best features of bulk and surface micromachining. It enables the production of stress free, thick, virtually arbitrarily shaped structures with well defined, thick or thin sacrificial layers, high sacrificial layer selectivity and large undercuts using IC compatible, processes. The basis of this approach is the use of readily available {111} oriented substrates, anisotropic Si trench etching, SiN masking and KOH etching.