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Chemometric analysis of infrared emission spectra for quantitative analysis of BPSG films on silicon

Haaland, David M.

Infrared emission spectra of 21 borophosphosilicate glass (BPSG) thin films on silicon wafers were collected with the samples held at constant temperature between 125--400{degree}C using a heating stage designed for precise temperature control ({plus_minus}{degree}C). Partial test squares calibrations applied to the BPSG infrared emittance spectra allowed four BPSG thin-film properties to be simultaneously quantified with precisions of 0.1 wt. % for boron and phosphorus, 35 {Angstrom} for film thickness, and 1.2{degree}C for temperature.