Publications Details

Al0.45Ga0.55N/Al0.30Ga0.70N high electron mobility transistors with Schottky gates and small subthreshold slope factor

Baca, A.G.; Armstrong, Andrew A.; Allerman, A.A.; Klein, Brianna A.; Douglas, Erica A.; Sanchez, Carlos A.; Fortune, Torben R.

Emerging ultrawide bandgap semiconductor materials are logical candidates for applications that exploit the large critical electric field (EC) associated with these devices. For semiconductor devices, EC scales approximately as Eg2 5 [1]. With a 25% larger bandgap and an approximately 73% larger EC than GaN, Al0.3Ga0.7N-channel high election mobility transistors (HEMTs) might be viable candidates for harsh environment electronics or short wavelength photo-transistors. In either case, transistor quality factors such as minimal off-state leakage currents and subthreshold slope factor are important metrics.