Publications Details
A new manufacturing method for the formation of gated field emission structures
Functioning, matrixed, field emission devices have been fabricated using a modification of standard integrated circuit fabrication techniques. The emitter-to-gate spacing is fixed by the thickness of a deposited oxide and not by photolithographic techniques. Modeling of the emitted electron trajectories using a two dimensional, Poisson solver, finite difference code indicates that much of the current runs perpendicular to plane of the part. Functioning triode structures have been fabricated using this approach. Emission current, to a collector electrically and physically separated from the matrixed array follows Fowler-Nordheim behavior.