Publications

McKay, C.G., Arghavani, R., & Arghavani, R. (2021). GAA IBM Hot Carrier Study [Presentation]. https://www.osti.gov/biblio/1890861

Anderson, E.M., Campbell, D.M., Ivie, J.A., Schmucker, S.W., Lu, P., Gao, X., Tracy, L.A., Arghavani, R., Bussmann, E., Baczewski, A.D., Lu, T.M., Katzenmeyer, A.M., Scrymgeour, D., Misra, S., & Misra, S. (2021). Development of low thermal budget Si epitaxy and high-k/ metal gate stack for atomically precise electronic devices [Conference Presentation]. 10.2172/1894018

Gao, X., Mendez Granado, J.P., Lu, T.M., Anderson, E.M., Campbell, D.M., Ivie, J.A., Schmucker, S.W., Grine, A., Lu, P., Tracy, L.A., Arghavani, R., Misra, S., & Misra, S. (2021). Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor [Conference Presentation]. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. 10.2172/1867273

Gao, X., Mendez Granado, J.P., Lu, T.M., Anderson, E.M., Campbell, D.M., Ivie, J.A., Schmucker, S.W., Grine, A., Lu, P., Tracy, L.A., Arghavani, R., Misra, S., & Misra, S. (2021). Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor [Conference Paper]. 10.1109/SISPAD54002.2021.9592578

Xiao, T.P., Bennett, C., Mancoff, F.B., Manuel, J., Hughart, D.R., Jacobs-Gedrim, R.B., Bielejec, E.S., Vizkelethy, G., Sun, J., Aggarwal, S., Arghavani, R., Marinella, M., & Marinella, M. (2021). Heavy-Ion-Induced Displacement Damage Effects in Magnetic Tunnel Junctions with Perpendicular Anisotropy. IEEE Transactions on Nuclear Science, 68(5), pp. 581-587. 10.1109/tns.2021.3057348

Lu, T.M., Gao, X., Anderson, E.M., Mendez Granado, J.P., Campbell, D.M., Ivie, J.A., Schmucker, S.W., Grine, A., Lu, P., Tracy, L.A., Arghavani, R., Misra, S., & Misra, S. (2021). Path towards a vertical TFET enabled by atomic precision advanced manufacturing [Conference Presentation]. 2021 Silicon Nanoelectronics Workshop, SNW 2021. 10.2172/1872185

Xiao, T.P., Bennett, C., Mancoff, F., Manuel, J., Hughart, D.R., Jacobs-Gedrim, R.B., Bielejec, E.S., Vizkelethy, G., Sun, J., Aggarwal, S., Arghavani, R., Marinella, M., & Marinella, M. (2020). Heavy-ion-induced displacement damage effects in magnetic tunnel junctions with perpendicular anisotropy [Conference Presentation]. 10.2172/1831024

Lu, T.M., Anderson, E.M., Campbell, D.M., Marshall, M., Lu, P., Schmucker, S.W., Tracy, L.A., Robison, M., Arghavani, R., Maurer, L., Baczewski, A.D., Ward, D., Misra, S., & Misra, S. (2020). Development of a high-k gate stack for atomic-precision advanced manufacturing [Conference Poster]. https://www.osti.gov/biblio/1768736

Arghavani, R. (2019). STT-MRAM For Radiation Hard Environments [Conference Poster]. https://www.osti.gov/biblio/1763955

Anderson, E.M., Schmucker, S.W., Campbell, D.M., Lu, T.M., Baczewski, A.D., Arghavani, R., Ward, D.R., & Ward, D.R. (2019). Low Thermal Budget Gate Stack for Atomic Precision Devices [Presentation]. https://www.osti.gov/biblio/1700542