Publications

Etch rates for binary nitrides in ECR Cl{sub 2}/CH{sub 4}/H{sub 2}/Ar are reported as a function of temperature, rf-bias, microwave power, pressure and relative gas proportions. GaN etch rates remain relatively constant from 30 to 125{degrees}C and then increase to a maximum of 2340 {angstrom}-min{sup {minus}1} at 170{degrees}C. The AlN etch rate decreases throughout the temperature range studied with a maximum of 960 {angstrom}-min{sup {minus}1} at 30{degrees}C. When CH{sub 4} is removed from the plasma chemistry, the GaN and InN etch rates are slightly lower, with less dramatic changes with temperature. The surface composition of the III-V nitrides remains unchanged over the temperatures studied. The GaN and InN rates increase significantly with rf power, and the fastest rates for all three binaries are obtained at 2 mTorr. Surface morphology is smooth for GaN over a wide range of conditions, whereas InN surfaces are more sensitive to plasma parameters.

The chemical inertness and high bond strengths of the 3-5 nitrides lead to slower plasma etching rates than for more conventional 3-5 semiconductors under the same conditions. High ion density conditions (greater than 3 x 10(exp 11) cm(exp {minus}3)) such as those obtained in ECR or magnetron reactors produce etch rates up to an order of magnitude higher than for RIE, where the ion densities are in the 10(exp 9) cm(exp {minus}3) range. The authors have developed smooth anisotropic dry etches for GaN, InN, AlN and their alloys based on Cl2/CH4/H2/Ar, BCl3/Ar, Cl2/H2, Cl2/SF6, HBr/H2 and HI/H2 plasma chemistries achieving etch rates up to approx. 4,000 A/min at moderate dc bias voltages (less than or equal to {minus}150 V). Ion-induced damage in the nitrides appears to be less apparent than in other 3-5`s. One of the key remaining issues is the achievement of high selectivities for removal of one layer from another.

Quantum well microdisk laser structures have been fabricated in the GaN/InGaN, GaAs/AlGaAs and GaAs/InGaP systems using a combination of ECR dry etching Cl2/CH4/H2/Ar, BCl3/Ar or CH4/H2/Ar plasma chemistries respectively, and subsequent wet chemical etching of a buffer layer underlying the quantum wells. While wet etchants such as HF/H2O and HCl/HNO3/H2O are employed for AlGaAs and InGaP, respectively, a new KOH based solution has been developed for AlN which is completely selective over both GaN and InGaN. Typical mask materials include PR or SiN(x), while the high surface recombination velocity of exposed AlGaAs (approximately) 10(exp 5)cm(center dot)/sec requires encapsulation with ECR-CVD SiN(x) to stabilize the optical properties of the modulators.