Publications

Results 151–193 of 193

Search results

Jump to search filters

Ultra-Wide-Bandgap Semiconductors for Generation-After-Next Power Electronics

Kaplar, Robert; Allerman, A.A.; Armstrong, Andrew A.; Crawford, Mary H.; Fischer, Arthur J.; Dickerson, Jeramy; King, Michael P.; Baca, Albert G.; Douglas, Erica A.; Sanchez, Carlos A.; Neely, Jason C.; Flicker, Jack D.; Zutavern, Fred J.; Mauch, Daniel L.; Brocato, Robert W.; Rashkin, Lee J.; Delhotal, Jarod J.; Fang, Lu; Kizilyalli, Isik; Aktas, Ozgur

Abstract not provided.

More Details
TYPE Conference Poster YEAR 2016
OSTI

PV Systems Reliability Final Technical Report: Ground Fault Detection

Lavrova, Olga; Flicker, Jack D.; Johnson, Jay

We have examined ground faults in PhotoVoltaic (PV) arrays and the efficacy of fuse, current detection (RCD), current sense monitoring/relays (CSM), isolation/insulation (Riso) monitoring, and Ground Fault Detection and Isolation (GFID) using simulations based on a Simulation Program with Integrated Circuit Emphasis SPICE ground fault circuit model, experimental ground faults installed on real arrays, and theoretical equations.

More Details
TYPE Other Report YEAR 2015
DOIOSTI

PV Systems Reliability Final Technical Report

Lavrova, Olga; Flicker, Jack D.; Johnson, Jay; Armijo, Kenneth M.; Gonzalez, Sigifredo; Schindelholz, Eric; Sorensen, Neil R.; Yang, Benjamin B.

The continued exponential growth of photovoltaic technologies paves a path to a solar-powered world, but requires continued progress toward low-cost, high-reliability, high-performance photovoltaic (PV) systems. High reliability is an essential element in achieving low-cost solar electricity by reducing operation and maintenance (O&M) costs and extending system lifetime and availability, but these attributes are difficult to verify at the time of installation. Utilities, financiers, homeowners, and planners are demanding this information in order to evaluate their financial risk as a prerequisite to large investments. Reliability research and development (R&D) is needed to build market confidence by improving product reliability and by improving predictions of system availability, O&M cost, and lifetime. This project is focused on understanding, predicting, and improving the reliability of PV systems. The two areas being pursued include PV arc-fault and ground fault issues, and inverter reliability.

More Details
TYPE Other Report YEAR 2015
DOIOSTI

Sensitivity analysis of a technique for the extraction of interface trap density in SiC MOSFETs from subthreshold characteristics

IEEE International Reliability Physics Symposium Proceedings

Hughart, David R.; Flicker, Jack D.; Atcitty, Stanley; Marinella, Matthew; Kaplar, Robert

A method for extracting interface trap density (DIT) from subthreshold I-V characteristics is used to analyze data on a SiC MOSFET stressed for thirty minutes at 175°C with a gate bias of-20 V. Without knowing the channel doping, the change in DIT can be calculated when referenced to an energy level correlated with the threshold voltage. © 2014 IEEE.

More Details
TYPE Conference YEAR 2014
DOIOSTIScopus

Sensitivity analysis of a technique for the extraction of interface trap density in SiC MOSFETs from subthreshold characteristics

IEEE International Reliability Physics Symposium Proceedings

Hughart, David R.; Flicker, Jack D.; Atcitty, Stanley; Marinella, Matthew; Kaplar, Robert

A method for extracting interface trap density (DIT) from subthreshold I-V characteristics is used to analyze data on a SiC MOSFET stressed for thirty minutes at 175°C with a gate bias of-20 V. Without knowing the channel doping, the change in DIT can be calculated when referenced to an energy level correlated with the threshold voltage. © 2014 IEEE.

More Details
TYPE Conference YEAR 2014
DOIOSTIScopus

Sensitivity analysis of a technique for the extraction of interface trap density in SiC MOSFETs from subthreshold characteristics

IEEE International Reliability Physics Symposium Proceedings

Hughart, David R.; Flicker, Jack D.; Atcitty, Stanley; Marinella, Matthew; Kaplar, Robert

A method for extracting interface trap density (DIT) from subthreshold I-V characteristics is used to analyze data on a SiC MOSFET stressed for thirty minutes at 175°C with a gate bias of-20 V. Without knowing the channel doping, the change in DIT can be calculated when referenced to an energy level correlated with the threshold voltage. © 2014 IEEE.

More Details
TYPE Conference YEAR 2014
DOIOSTIScopus

Photovoltaic Ground Fault and Blind Spot Electrical Simulations

Flicker, Jack D.; Johnson, Jay

Ground faults in photovoltaic (PV) systems pose a fire and shock hazard. To mitigate these risks, AC-isolated, DC grounded PV systems in the United States use Ground Fault Protection Devices (GFPDs), e.g., fuses, to de-energize the PV system when there is a ground fault. Recently the effectiveness of these protection devices has come under question because multiple fires have started when ground faults went undetected. In order to understand the limitations of fuse-based ground fault protection in PV systems, analytical and numerical simulations of different ground faults were performed.

More Details
TYPE SAND Report YEAR 2013
DOIOSTI

Electrical simulations of series and parallel PV arc-faults

Conference Record of the IEEE Photovoltaic Specialists Conference

Flicker, Jack D.; Johnson, Jay

Arcing in PV systems has caused multiple residential and commercial rooftop fires. The National Electrical Code® (NEC) added section 690.11 to mitigate this danger by requiring arc-fault circuit interrupters (AFCI). Currently, the requirement is only for series arc-faults, but to fully protect PV installations from arc-fault-generated fires, parallel arc-faults must also be mitigated effectively. In order to de-energize a parallel arc-fault without module-level disconnects, the type of arc-fault must be identified so that proper action can be taken (e.g., opening the array for a series arc-fault and shorting for a parallel arc-fault). In this work, we investigate the electrical behavior of the PV system during series and parallel arc-faults to (a) understand the arcing power available from different faults, (b) identify electrical characteristics that differentiate the two fault types, and (c) determine the location of the fault based on current or voltage of the faulted array. This information can be used to improve arc-fault detector speed and functionality. © 2013 IEEE.

More Details
TYPE Conference YEAR 2013
OSTIScopus
Results 151–193 of 193
Results 151–193 of 193