Publications

Development of a complementary heterostructure field effect transistor (CHFET) technology for low-power, mixed-mode digital-microwave applications is presented. An earlier digital CHFET technology with independently optimizable transistors which operated with 319 ps loaded gate delays at 8.9 fJ is reviewed. Then work demonstrating the applicability of the digital nJFET device as a low-power microwave transistor in a hybrid microwave amplifier without any modification to the digital process is presented. A narrow band amplifier with a 0.7 × 100 μm nJFET as the active element was designed, constructed, and tested. At 1 mW operating power, the amplifier showed 9.7 dB of gain at 2.15 GHz and a minimum noise figure of 2.5 dB. In addition, next generation CHFET transistors with sub 0.5 μm gate lengths were developed. Cutoff frequencies, ft of 49 GHz and 11.5 GHz were achieved for n- and p-channel FETs with 0.3 and 0.4 μm gates, respectively. These FETs will enable both digital and microwave circuits with enhanced performance.

We report a new application of atomic force microscopy (AFM) for process characterization of GaAs integrated circuit fabrication. By using the near atomic-level z-resolution of AFM, we are able to gain information not available by other imaging techniques in a number of steps in the sequence for GaAs IC fabrication. A nondestructive method of determining whether micron-sized vias have been etched to completion is presented. In addition, the AFM has been used to evaluate material removal following several of fabrication steps. Shallow trench formation occurs as a result of GaAs removal during the sidewall etch for a commonly used sidewall spacer process. This effect has been not been observed previously by other techniques. Other examples of unintentional removal of small amounts of GaAs during shallow wet and dry etches are presented. These examples show the utility of AFM as an in-line process characterization tool.