Publications Details

Worst-Case Bias During Total Dose Irradiation of SOI Transistors

Schwank, James R.; Shaneyfelt, Marty R.

The worst case bias during total dose irradiation of partially depleted SOI transistors (from SNL and from CEA/LETI) is correlated to the device architecture. Experiments and simulations are used to analyze SOI back transistor threshold voltage shift and charge trapping in the buried oxide.