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Vapor-phase adsorption kinetics of 1-decene on H-terminated Si(100)

Mayer, T.M.; Bunker, B.C.

We have investigated in situ and in real time vapor-phase self-assembly of 1-decene on Si, using attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIRS). The adsorption of 1-decene on hydrogenated Si(100) results in a decane-terminated hydrophobic surface, indicated by the sessile-drop water contact angle at 107 {+-} 2. This maximum contact angle is achieved at 160 C under 30 mTorr of vapor-phase 1-decene. The fractional surface coverage of decane, calculated from the IR absorbance of C-H stretching vibrational modes near 2900 cm{sup -1}, follows a Langmuir isotherm. The absolute surface coverage calculated from the IR absorbance saturates at 3.2 x 10{sup 14} cm{sup -2}. On the basis of this isotherm, the empirical rate constant (k{prime}{sub 2}) that governs the rate-limiting step in 1-decene adsorption on HF-treated Si(100) is (3.3 {+-} 0.7) x 10{sup -2} min{sup -1}. The thickness and cant angle of the decane monolayer at the saturation coverage are calculated from angle resolved X-ray photoelectron spectroscopy (AR-XPS). The calculated thickness ranges from 8.4 to 18 {angstrom} due to the uncertainty in the attenuation lengths of C(1s) and Si(2p) photoelectrons through the decane layer. For the same uncertainty, the calculated cant angle ranges from 0 to 55{sup o}. Spectroscopic ellipsometry is independently used to approximate the film thickness at 16 {angstrom}. Monitoring the decane monolayer over a period of 50 days using AR-XPS indicates that the Si surface underneath the decane monolayer gets oxidized with time, leading to the degradation of the decane layer.