Publications Details

Uses of Monte Carlo computer simulations in understanding epitaxial growth and ion bombardment of Si(001)

Chason, E.

Understanding the mechanisms of growth during vapor-phase deposition is critical for the precise control of surface morphology required by advanced electronic device structures. Yet only relatively recently have the tools for observing this growth on an atomic-level scale become available (via scanning tunneling microscopy (STM), reflection high energy electron diffraction (RHEED) and low-energy electron microscopy (LEEM)). We present results from our own RHEED and STM measurements in which we use computer simulations to aid in determining the fundamental surface processes which contribute to.the observed structures. In this study of low-energy ion bombardment and growth on Si(001), it is demonstrated how simulations enable us to determine the dominant atomistic process.