Publications Details

Transient Simulations in Silvaco Victory Device for a N-Type SiC Drift Step Recovery Diode

Graves, David Z.; Lehmann, Megan; Bilbao, Argenis V.; Bayne, Stephen B.; Schrock, Emily A.

This paper builds upon previous research in developing a SiC Drift Step Recovery Diode (DSRD) Model in Silvaco Victory Device. For this research, the DSRD is based on an N-type substrate for improved manufacturability. The model described in this paper was developed by characterizing DSRD devices under DC and transient conditions. The details of the pulsed power testbed developed for the transient characterization is outlined in this paper. The goal of this model is to allow the rapid development of future pulsed power systems and for further device structure optimization.